SiO2/Al2O3/HfO2 Selective Buried Oxide Layer (SELBOX) Engineering and Its Influence on 20 nm n-MOSFET

Aemen Qais A. Al-Yozabakee; Qais Th. Algwari

doi:10.51173/eetj.v3i1.29

Authors

Aemen Qais A. Al-Yozabakee College of Electronics Engineering, Ninevah University, Mosul, Iraq
Qais Th. Algwari College of Electronics Engineering, Ninevah University, Mosul, Iraq https://orcid.org/0000-0002-6524-946X

DOI:

https://doi.org/10.51173/eetj.v3i1.29

Keywords:

Al2O3, HfO2, n-MOSFET, SELBOX, Silvaco ATLAS, Breakdown voltage

Abstract

Short channel effects (SCEs) of nano-scaled n-MOSFET are solved by various techniques, one of which is the Selective buried oxide layer (SELBOX), which is implanted in the substrate of the MOSFET. This work involves simulating a 20 nm n-MOSFET with HfO₂ gate dielectric using TCAD Silvaco ATLAS, and adding a SELBOX beneath the drain area at 30 nm depth. The scenario of this work is using three materials, SiO₂, Al₂O_3,and HfO_2,separately as a SELBOX. Also, the performance of the device is examined by shifting the SELBOX from 30 nm depth to direct contact with the channel position. The results depend on the band gap value of the material and its closeness to the drain region, which influences MOSFET performance. So, the comparison of the results will be between the standard design of MOSFET (without a SELBOX) and the design with the SELBOX, which has direct contact position with the channel. For SiO₂SELBOX material, the leakage current is decreased by 33% and breakdown voltage is increased from 85.09 V to 491.4 V. Al₂O₃SELBOX material, the leakage current is decreased by 27%, and breakdown voltage is increased from 85.09 V to 275.7 V. Finally, for HfO₂SELBOX, the leakage current is increased by 21%, and breakdown voltage is increased from 85.09 V to 172.3 V.

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