AL-YOZABAKEE, Aemen Qais A.; TH. ALGWARI, Qais. SiO2/Al2O3/HfO2 Selective Buried Oxide Layer (SELBOX) Engineering and Its Influence on 20 nm n-MOSFET. Electrical Engineering Technical Journal, [S. l.], v. 3, n. 1, p. 1–7, 2025. DOI: 10.51173/eetj.v3i1.29. Disponível em: https://eetj.mtu.edu.iq/eetj/index.php/home/article/view/29. Acesso em: 4 jun. 2026.